机译:温度和光学限制对INGAAS / INP量子丝激光器阈值电流的影响
Inst. fur Halbleitertechnik Tech. Univ. Braunschweig Germany;
indium compounds; gallium arsenide; quantum well lasers; carrier density; temperature; thermal stability; III-V semiconductors; V-groove quantum wire laser; temperature influence; optical confinement; threshold current density; optical gain; room-temperature operation; improved temperature stability; band structure; conformal mapping; InGaAs-InP;
机译:温度和光学限制对InGaAs / InP量子线激光器的阈值电流的影响
机译:温度和光学限制对InGaAs / InP量子线激光器的阈值电流的影响
机译:V型槽量子线InGaAs-InP激光器的增益和阈值电流计算
机译:InGaAs / InGaAsP多量子阱分离限制激光器的阈值电流分析
机译:InGaASP-INP多量子孔激光器的功率和光谱表征
机译:通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
机译:InGaAsP / InP中堆叠的InGaAs侧壁量子线的光学特性