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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Multiple-wavelength membrane BH-DFB laser arrays
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Multiple-wavelength membrane BH-DFB laser arrays

机译:多波长膜BH-DFB激光器阵列

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We realized multiple-wavelength laser arrays based on a membrane buried-heterostructure distributed-feedback (BH-DFB) structure fabricated by electron-beam lithography (EBL), CH/sub 4//H/sub 2/ reactive-ion etching, and regrowth by organometallic vapor-phase epitaxy (OMVPE), and investigated their wavelength controllability using two different approaches, i.e., a modulation of the DFB grating period and that of the stripe width. Under optically pumped room-temperature continuous-wave (RT-CW) operation, a wavelength fluctuation for a fixed DFB grating period was found to be less than /spl plusmn/1.2 nm for all 75 samples prepared on the same wafer. A total wavelength span of 64 nm and an average channel spacing of 3.4 nm were obtained in the DFB period modulation range of 311.25 to 335.00 nm with 1.25-nm steps. An average channel spacing of 4.1 nm was also obtained in the stripe modulation range of 1.0-2.8 /spl mu/m with 0.2-/spl mu/m steps.
机译:我们基于通过电子束光刻(EBL),CH / sub 4 // H / sub 2 /反应性离子刻蚀和电离离子刻蚀制造的膜埋藏异质结构分布反馈(BH-DFB)结构实现了多波长激光阵列通过有机金属气相外延(OMVPE)再生长,并使用两种不同的方法,即DFB光栅周期的调制和条带宽度的调制,研究了它们的波长可控性。在光泵浦的室温连续波(RT-CW)操作下,对于在同一晶片上制备的所有75个样品,固定DFB光栅周期的波长波动均小于/ spl plusmn / 1.2 nm。在311.25至335.00 nm的DFB周期调制范围内,以1.25 nm的步长获得了64 nm的总波长范围和3.4 nm的平均通道间隔。在1.0-2.8 / spl mu / m的条带调制范围内,还以0.2- / spl mu / m的步长获得了4.1 nm的平均通道间距。

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