首页> 外国专利> MANUFACTURING METHOD OF SURFACE EMITTING LASER DIODE AND MULTIPLE-WAVELENGTH SURFACE EMITTING LASER DIODE, SURFACE EMITTING LASER DIODE, MULTIPLE-WAVELENGTH SURFACE EMITTING LASER DIODE, AND OPTICAL COMMUNICATION SYSTEM

MANUFACTURING METHOD OF SURFACE EMITTING LASER DIODE AND MULTIPLE-WAVELENGTH SURFACE EMITTING LASER DIODE, SURFACE EMITTING LASER DIODE, MULTIPLE-WAVELENGTH SURFACE EMITTING LASER DIODE, AND OPTICAL COMMUNICATION SYSTEM

机译:发光二极管和多波长发光二极管的制造方法,发光二极管,多波长发光二极管和光通信系统

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a surface emitting laser diode and a multiple-wavelength surface emitting laser diode which improves wavelength reproducibility, and is excellent in mass productivity, and to provide the surface emitting laser diode, the multiple-wavelength surface emitting laser diode and an optical communication system.;SOLUTION: An n electrode 11 is formed on a lower face of a GaAs substrate 12, and lower DBR13A, 13B and light emitting layers 14A, 14B are formed in order on an upper face to fabricate a substructure 17. The substructure 17 is joined to superstructures 18A, 18B, by which the multiple-wavelength surface emitting laser diode 1 is constituted, wherein the superstructures are formed by spacers 15A, 15B which are different in thickness according to luminescent wavelengths in the light emitting layers 14A, 14B, and upper DBR16A, 16B. Two different luminescent wavelengths are obtained by making different the thicknesses of the spacers 15A, 15B.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种表面发射激光二极管和多波长表面发射激光二极管的制造方法,该方法提高了波长再现性,并且在批量生产方面优异,并且提供了一种表面发射激光二极管,该多波长表面发射激光二极管解决方案:在GaAs基板12的下表面上形成n电极11,并在下表面上依次形成下DBR13A,13B和发光层14A,14B。制造下部结构17。下部结构17接合到上部结构18A,18B,通过该上部结构18A,18B构成了多波长表面发射激光二极管1,其中上部结构由间隔物15A,15B形成,间隔物15A,15B的厚度根据发光波长而不同。发光层14A,14B和上DBR16A,16B。通过使间隔件15A,15B的厚度不同而获得两种不同的发光波长。;版权所有:(C)2006,JPO&NCIPI

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号