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机译:导引下的植入物限制垂直腔表面发射激光器的高速调制。
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL;
etching; high-speed optical techniques; laser beams; laser cavity resonators; laser modes; optical modulation; photonic crystals; semiconductor lasers; surface emitting lasers; bit rate 12.5 Gbit/s; bit rate 15 Gbit/s; current diffusion effect; etched photonic crystal; high-speed modulation; holey wedge structure; implant-confined vertical-cavity surface-emitting laser; laser gain; single transverse-mode PhC VCSEL; wavelength 850 nm; semiconductor laser; vertical-cavity surface-emitting laser (VCSEL);
机译:高速垂直腔面发射激光器的自旋偏振调制
机译:发射波长为1.27μm的InGaAs:Sb-GaAs-GaAsP量子阱垂直腔表面发射激光器的高速调制
机译:氧化物限制垂直腔面发射激光器的高速数字调制特性-与实验结果一致的数值模拟
机译:植入式开孔指数导向垂直腔表面发射激光器的建模
机译:垂直腔表面发射激光器的设计和制造及其高速调制
机译:覆盖绿色间隙的量子点垂直腔表面发射激光器
机译:指数引导植入物限制垂直腔面发射激光器的高速调制
机译:垂直腔面发射激光器的横向模式动力学和超快速调制