...
首页> 外文期刊>Selected Topics in Quantum Electronics, IEEE Journal of >Correction to “GaAs and InAs Nanowires for Ballistic Transport”
【24h】

Correction to “GaAs and InAs Nanowires for Ballistic Transport”

机译:对“用于弹道运输的GaAs和InAs纳米线”的更正

获取原文
获取原文并翻译 | 示例

摘要

Sumary form only give, as follows. In the above-named work, there is an error on page 4, right column, sixth line of the first full paragraph. The statement Closer look (top view SEM and cross-section TEM, not shown) exposes a hexagonal cross section with {11??20}-type facets. should instead be corrected to "Closer look (top view SEM and cross-section TEM, not shown) exposes a hexagonal cross section with {1??100}-type facets."
机译:摘要格式仅给出如下。在上述工作中,第一个完整段落的第4页右栏第六行有错误。看起来更仔细的陈述(顶视图SEM和横截面TEM,未显示)暴露了具有{11 ?? 20}型小平面的六边形横截面。而是应更正为“更近的外观(顶视图SEM和横截面TEM,未显示)露出带有{1 ?? 100}型刻面的六边形横截面”。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号