Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers

摘要

In this paper, the study of the photoconductivity in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 to 400 K is reported. These antennas are aimed to work in conjunction with quantum dot semiconductor lasers to effectively generate pulsed and continuous wave terahertz radiation. For the efficient operation, laser wavelengths providing the highest photocurrent should be determined. To study the interband photoconductivity of quantum dot photoconductive antennas, at room and cryogenic temperatures, we employed a broadly-tunable InAs/GaAs quantum dot based laser providing a coherent pump with power exceeding 20 mW over a 100 nm tunability range. The quantum dot antenna structure revealed sharp temperature-dependent photoconductivity peaks in the vicinity of wavelengths, corresponding to the ground and excited states of InAs/GaAs quantum dots. The ground state photoconductivity peak vanishes with a temperature drop, whereas the excited state peak persists. We associate this effect with different mechanisms of photoexcited carriers extraction from quantum dots.