Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

摘要

We report electrically pumped, continuous-wave (cw) InAs& x002F;GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4& x00B0;. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 & x00D7; 10(7) cm(-2). Room-temperature cw lasing at similar to 1.3& x00A0;& x03BC;m has been achieved, with a minimum threshold current density of 34.6 A& x002F;cm(2) per layer, a maximum operating temperature of 80& x00A0;& x00B0;C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.