Solution Method for Mixed Boundary Value Problems: Applications to Current Injection in Semiconductor Lasers

摘要

We developed an iterative method for calculating the solutions to mixed boundary value problems. First, we demonstrate the method by calculating injection current densities from a metal contact plane into a single layer of finite conductivity material. Next, we show how the method adapts to much more complicated cases by calculating injection profiles for several semiconductor laser geometries. The method proves to be practical and accurate for calculating injection current profiles for semiconductor epitaxial structures.