Design and characterization of In/sub 0.2/Ga/sub 0.8/As MQW vertical-cavity surface-emitting lasers

摘要

The device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSELs) are presented. The basic design goal was to increase the output power of the lasers without greatly increasing the low threshold current reported in earlier devices. The material characterization was performed by measuring in-plane lasers and broad-area VCSELs made from the same material as the small VCSELs. For 10- mu m-square devices, outputs over 3 mW, device operation over 100 degrees C, 6% wall-plug efficiency, threshold voltages under 3 V, and threshold currents under mA are reported.