Monolithic integration of In/sub 0.2/Ga/sub 0.8/As vertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors

摘要

Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm/sup 2/ and differential quantum efficiencies as high as 50%.