Circuit model for multilongitudinal-mode semiconductor lasers

摘要

Under the assumption that the emission spectra of a semiconductor laser diode (LD) as a function of wavelength is Gaussian, a simple circuit model for a multilongitudinal-mode (MLM) LD is developed based upon MLM rate equations. This model is very suitable for the computer-aided analysis of an optoelectronic integrated circuit (OEIC). Using this model, the dc and ac characteristics of a trenched buried heterostructure LD are studied. The simulated results agree with the reports. The dependence of threshold and emission spectra on the cavity length is simulated.