Photoluminescence and photoluminescence excitation spectra of In0.2Ga0.8N-GaN quantum wells: comparison betweenexperimental and theoretical studies

摘要

InGaN-GaN represents an important heterostructure withnapplications in electronics and optoelectronics. It also offers a systemnwhere we can study the effects of interface roughness, alloy clustering,nand the piezoelectric effect. In the paper, we examine how these factorsninfluence the photoluminescence and excitation photoluminescence innInGaN-GaN quantum wells. We examine the Stokes shift as a function ofnthe excitation level and doping and relate the values to thenpiezoelectric effect and disorder in the system. Detailed comparisonsnare made with experimental results