Hole distribution in InGaAsP 1.3-Μm multiple-quantum-well laserstructures with different hole confinement energies

摘要

We have investigated the hole distribution in strained InGaAsPnmultiple-quantum-well (MQW) structures by direct hole transportnmeasurements with time-resolved photoluminescence spectroscopy. Thenresults show that the hole transport time over the MQW primarily dependsnon the hole confinement energy in the wells and increases sharply withnthe well depth. A simple thermionic emission model indicates that thenheavy holes escape predominantly over the light-hole barrier edge fornstrain-compensated MQW structures. The results are corroborated withnobserved laser performance data