The impact of CMP and underlying back-end topographical features on losses in deposited dielectric waveguides

摘要

The bending losses in rectangular dielectric waveguides deposited on a chemical mechanical polished (CMP) surface above the metal interconnect/interlayer dielectric stack of a processed Si wafer are modeled and estimated. CMP efficiently removes local topography and microroughness, but leaves long-range surface profile undulations due to variations in the metal pattern density. These surface undulations are then transferred to the waveguides deposited on this surface. A beam propagation method (BPM) waveguide simulation program and an equation for bending loss developed by Marcuse have been used to examine the bending losses seen by waveguides deposited on such a surface. In order to simplify the simulation of the bending losses of the waveguides, the undulations are modeled as a series of arcs, which is shown to be a good approximation. It was determined that under typical conditions, the bending losses may be ignored as they are less than 0.1 dB/cm, which is below the range of typical propagation losses for a straight guide.