Analytical model for current transport in organic thin-film transistors

摘要

The I--V characteristics of organic thin-film transistors are examined and a model is proposed that could explain the behaviour of the drain current in the ‘subthreshold' mode. The model proposes that an injection current at the source dominates the ‘subthreshold' current at positive gate voltage and the magnitude of this current is modulated by space charge residing in the bulk of the thin film. It is further proposed that a guard ring around the source could minimise the injection current.