Power amplifier performance and modelling of one-emitter-fingerGaAlAs/GaAs heterojunction bipolar transistor

摘要

A physically based, large-signal HBT model is presented accountingnfor self-heating effects by way of a thermal circuit representing thenthermal resistance of the power device. The model is validated byncomparison with the experimental DC characteristics, S-parameternmeasurements under small-signal operation and output power measurementsnat 2 GHz under large-signal operation. The authors focus on the HBTnfrequency performance being measured using both probes and bond pads