Design and evaluation of a novel enhancement mode FET logic gateconfiguration in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

摘要

Evaluation of a high-performance logic gate configuration,nutilising enhancement mode field effect transistors, is presented innAlGaAs/GaAs/AlGaAs quantum well HEMT technology. The performance of thengate in terms of speed, based on frequency divider measurements, shows anvery high-speed operation achieved by utilising the bootstrap effect innthe operation of the logic gate. The gate is suitable for thenimplementation of ultra-high-speed LSI circuits where high speed andnnoise margin are of critical importance