Design and evaluation of a novel enhancement mode FET logic gate configuration in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

摘要

Evaluation of a high-performance logic gate configuration, utilising enhancement mode field effect transistors, is presented in AlGaAs/GaAs/AlGaAs quantum well HEMT technology. The performance of the gate in terms of speed, based on frequency divider measurements, shows a very high-speed operation achieved by utilising the bootstrap effect in the operation of the logic gate. The gate is suitable for the implementation of ultra-high-speed LSI circuits where high speed and noise margin are of critical importance.