Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

摘要

A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in Μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds