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Photochemical Decomposition Mechanisms for AZ-Type Photoresists

机译:AZ型光刻胶的光化学分解机理

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The photochemical decomposition mechanism of orthonaphthoquinonediazides has been investigated principally by infrared and carbon-13 nuclear magnetic resonance spectroscopies. The results demonstrate that the decomposition proceeds via a ketene intermediate to a photoproduct, the nature of which depends on the reaction conditions. Model resist systems were prepared by mixing orthonaphthoquinonediazides and 2,3,6-trimethylphenol or the diazide plus Novolak resin. Under ambient thermal and humidity conditions, ultraviolet (UV) exposure of the diazide yields 3-indenecarboxylic acid as the final photoproduct. However, UV exposure in vacuo results in ester formation via a ketene-phenolic OH reaction. The decomposition pathway and ensuing reactions have been shown to be the same for both 1- and 3-orthonaphthoquinonediazides attached to mono- and trihydroxybenzophenones. The technological implications for resist processing derived from these studies are also discussed.
机译:主要通过红外和碳13核磁共振波谱研究了邻萘醌二叠氮化物的光化学分解机理。结果表明,分解通过烯酮中间体进行,形成光产物,其性质取决于反应条件。通过将邻甲萘醌二叠氮化物和2,3,6-三甲基苯酚或二叠氮化物加酚醛清漆树脂混合来制备模型抗蚀剂体系。在环境温度和湿度条件下,重氮化物在紫外线(UV)照射下会生成3-茚满羧酸作为最终光产物。然而,真空中的紫外线暴露导致通过乙烯酮-酚羟基反应形成酯。对于与单和三羟基二苯甲酮连接的1-和3-邻萘甲醌二叠氮化物,其分解途径和随后的反应已显示出相同的结果。还讨论了从这些研究中得出的抗蚀剂加工的技术含义。

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