Radio-Frequency Excited Plasma at Atmospheric Pressure - A New Dimension in Plasma Processing

摘要

Using the new RF excited process, it is possible to operate at up to 100 mbar pressure, or using helium as make-up gas, at atmospheric pressure, depending on the gas used. Using micro-patterned electrodes, plastic surfaces can be processed. In another application, diamondlike carbon (DLC) coatings can be formed on silicon, at deposition rates between 1 and 10 μm/min.