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Comparison of surface modification and deuterium retention in W and W-Cr alloy film under high energy deuterium ion implantation

机译:高能氘离子植入下W和W-Cr合金膜中表面改性和氘保留的比较

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摘要

Pure W film and W-Cr alloy film prepared by magnetron sputtering were exposed to high-energy (30 keV) deuterium ions at room temperature with flux of about 1.76 x 10(17) D/m(2)s to the fluence of 0.89 x 10(22) D/m(2). Surface morphologies before and after irradiation are observed by SEM. The non-hollow lid blisters are appeared on the surface after deuterium ion implantation, which are considered to be produced by diffusion and agglomeration of deuterium atoms. The cracks of deuterium-implanted W below the surface indicate that the deuterium trapped in the material is supersaturated due to the deuterium concentration exceeding the solubility of the material. In addition, deuterium retention properties after irradiation are examined by TDS. The total amount of released deuterium in pure W film is slightly higher than that in W-Cr alloy film, implying that the refined grain size of W-Cr alloy film would suppress the blister behavior and deuterium retention.
机译:通过磁控溅射制备的纯W薄膜和W-CR合金薄膜在室温下暴露于高能量(30keV)氘离子,通量约为1.76×10(17)d / m(2)s,流量为0.89 x 10(22)d / m(2)。 通过SEM观察照射前后的表面形态。 在氘离子注入后出现非空心盖子衬垫,其被认为是通过氘原子的扩散和附聚制造的。 表面下方的氘植入W的裂缝表明由于氘浓度超过材料的溶解度,捕获在材料中的氘被过度饱和。 此外,通过TDS检查照射后的氘保留性能。 纯W薄膜中释放的氘的总量略高于W-Cr合金膜中的薄膜,这意味着W-Cr合金膜的精制晶粒尺寸将抑制泡罩行为和氘保持率。

著录项

  • 来源
    《Fusion Engineering and Design》 |2021年第1期|112082.1-112082.5|共5页
  • 作者单位

    Beihang Univ Sch Phys & Nucl Energy Engn Beijing 100191 Peoples R China;

    Beihang Univ Sch Phys & Nucl Energy Engn Beijing 100191 Peoples R China;

    Beihang Univ Sch Phys & Nucl Energy Engn Beijing 100191 Peoples R China;

    Beihang Univ Sch Phys & Nucl Energy Engn Beijing 100191 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Nanocrystalline; Tungsten film; Non-Hollow lid blister; Deuterium retention; Grain refinement;

    机译:纳米晶体;钨膜;非空心盖泡罩;氘保留;谷物细化;
  • 入库时间 2022-08-19 02:09:37

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