Enhanced charge storage capability of (Bi_2O_3)_(0.4)(ZrO_2)_(0.6) charge trapping layer in nanocrystal memory devices

摘要

A structure of p-Si/Al2O3/(Bi2O3)(0.4)(ZrO2)(0.6)(BZO)/Al2O3 /Pt has been fabricated as Nanocrystal Charge Trapping Memory (NCTM), where the double nanocrystals (NCs) of Bi2O3 and ZrO(2 )generated in BZO charge trapping layer (CTL) through rapid temperature annealing (RTA). A large memory window (MW) of X8.6 V and high defect traps of similar to 2.2 x 10(13)cm(-2) were obtained at a low sweeping voltages of +/- 8 V after 800 degrees C for 90 s in O-2 ambient. The devices of different RTA conditions were investigated to analyze the process of NCs traps formation by the X-ray diffraction and X-ray photoelectron spectroscopy. Excellent retention characteristics of the room temperature were observed after 10(4 )s because of the deep defect traps and high quantum wells between CTL and tunneling oxide layer (TOL).