An integrated approach

摘要

Low-k dielectric materials for semiconductor manufacturing have poor mechanical properties such as low hardness and modulus, creating the need for very low stress packaging and close reliability monitoring. Also, integration schemes typicaEy require precise capping/barrier layers that add costs and reduce the effective dielectric constant. Manufacturing challenges include both the fundamental materials properties, and the cost of integrating these new materials into volume production. Material property challenges can be resolved with surface modification or capping/barrier layers, a reduction in the carbon content to make relatively higher-k films, and new package technologies.