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Pushing Etch to the limit for the 45/32nm node

机译:将蚀刻推到45 / 32nm节点的极限

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摘要

In the past, etch systems were able to achieve their process goals with relative ease. Modern and future etch process specifications will require current etch systems to perform at the very limits of their capabilities. Etch systems are typically designed to operate best within a specific process space, and many previously unseen process issues will develop when tools are pushed beyond their original design parameters. For this reason, we believe the 45/32nm node requires a new mask etch hardware set in order to accommodate the very difficult process results required.
机译:过去,蚀刻系统能够相对轻松地实现其工艺目标。现代和未来的蚀刻工艺规范将要求当前的蚀刻系统在其功能的极限范围内运行。蚀刻系统通常被设计为在特定的过程空间内运行最佳,并且当工具超出其原始设计参数时,将会出现许多以前看不见的过程问题。因此,我们认为45 / 32nm节点需要一套新的掩模蚀刻硬件,以适应所需的非常困难的工艺结果。

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