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A framework of shape optimisation based on the isogeometric boundary element method toward designing thin-silicon photovoltaic devices

机译:基于等几何边界元法的形状优化框架设计薄硅光伏器件

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We propose a gradient-based optimisation framework to design the shape of the interfaces in periodic layered structures, which can model photovoltaic devices, optical gratings, etc., according to a desired electromagnetic property. To this end, we first develop an isogeometric boundary element method (IGBEM) to analyse singly periodic boundary value problems for 2D Helmholtz equation in layered media. By nature, the IGBEM is not only numerically accurate but also suitable for the shape optimisation in comparison with the conventional boundary- and domain-type solvers. Next, we derive the shape derivative (or shape sensitivity) of the objective function in terms of the magnetic field strength or energy absorption rate on the basis of the adjoint variable method. The shape derivative can be computed by solving the primal and adjoint problems with the IGBEM. Subsequently, we map our shape optimisation problems to nonlinear programming problems in order to exploit a general-purpose software for the latter problems. After verifying our optimisation framework rigorously by comparing with the exact solutions, we demonstrate a shape optimisation of the silicon-metal interface in a model of thin-silicon photovoltaic devices: it is crucial to determine the interface so that the energy of the incident light can be confined in the silicon layer as much as possible when the thickness of the layer is unconventionally small; one micrometre in our model. The optimal shape achieved 8.6 times higher absorption rate than the reference (flat) shape. This simulation shows that the proposed framework is capable of making a fundamental contribution to analysing and designing photovoltaic devices as well as photonic and plasmonic devices that consist of singly periodic layers.
机译:我们提出了一种基于梯度的优化框架来设计周期性分层结构中界面的形状,该结构可以根据所需的电磁特性对光伏设备,光栅等进行建模。为此,我们首先开发了等几何边界元方法(IGBEM),以分析分层介质中二维Helmholtz方程的单周期边值问题。本质上,与常规的边界和域类型求解器相比,IGMEM不仅在数值上准确,而且还适合形状优化。接下来,我们基于伴随变量法,根据磁场强度或能量吸收率得出目标函数的形状导数(或形状灵敏度)。形状导数可以通过使用IGBEM解决原始问题和伴随问题来计算。随后,我们将形状优化问题映射到非线性规划问题,以便针对后一个问题开发通用软件。通过与精确的解决方案进行比较严格地验证了我们的优化框架后,我们在薄硅光伏器件模型中演示了硅金属界面的形状优化:确定界面以使入射光的能量能够当层的厚度非常规地薄时,将其尽可能地限制在硅层中;我们模型中的一微米。最佳形状的吸收率是参考(平坦)形状的8.6倍。该仿真表明,提出的框架能够为分析和设计光伏器件以及由单个周期性层组成的光子和等离激元器件做出重要贡献。

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