Electrostatic discharge (ESD) sensitivity of thin-film hybrid passive components

摘要

The electrostatic discharge (ESD) sensitivities of thin-film passive components from various hybrid integrated circuits (HICs) were characterized using two ESD standard models: the human body model (HBM) and the charge device model (CDM). It was found that thin-film Au conductors made with a minimum linewidth of 60 mu m were insensitive to ESD of 3000 V. Capacitors failed at HBM voltages as low as 300 V when tested following the specification that calls for multiple HBM discharges. However, this test procedure was not indicative of the capacitors' ESD robustness due to a cumulative effect of the capacitors' ESD charging voltages. Low-value resistors were sensitive to ESD voltages as low as 600 V. High-value resistors, when not RTV (room temperature vulcanized) encapsulated, were damaged due to arcing at lower ESD voltages than when encapsulated. On the basis of the experimental results and analysis, rules for ESD robust low-value resistors are recommended. Also, a new meander resistor design is proposed.