...
首页> 外文期刊>IEEE Transactions on Components, Hybrids, and Manufacturing Technology >Investigations of failure mechanisms of TAB-bonded chips during thermal aging
【24h】

Investigations of failure mechanisms of TAB-bonded chips during thermal aging

机译:TAB键合芯片热老化过程中的失效机理研究

获取原文
获取原文并翻译 | 示例
           

摘要

Eutectic soldering and thermocompression bonding were investigated with regard to thermal aging mechanisms in tape automated bonding (TAB) chips. These methods require two different metallurgies: Cu-Sn-Au and Cu-Au. Effects such as pore formation which are due to the Kirkendall effect and the formation of ternary phases were investigated. The influence of the lead roughness and of copper recrystallization was shown by the use of electrodeposited copper and rolled annealed copper. The influence of these parameters on long-term reliability is summarized. Results of the study include the following: the predominant failure mechanisms in a pull test was lead fracture. The results from the pull test show that the values are mainly affected by aging effects in the leads. Metallographic examinations show different aging mechanisms at the bonded interfaces. The Kirkendall effect and pore formation is accelerated by the accumulation of tin in the interface between copper and gold due to the high roughness of the tape. The formation of pores for eutectic soldering can be avoided by a tape with reduced roughness, which minimizes the accumulation of tin during the bonding process. Compared with other contact methods for chips, TAB technology shows high reliability, with very low degradation even after very severe thermal aging at 200 degrees C.
机译:针对带自动粘合(TAB)芯片中的热老化机理,研究了共晶焊接和热压粘合。这些方法需要两种不同的冶金学:Cu-Sn-Au和Cu-Au。研究了由于柯肯达尔效应和三元相的形成而产生的孔效应。通过使用电沉积铜和轧制退火铜,可以看出铅粗糙度和铜重结晶的影响。总结了这些参数对长期可靠性的影响。研究结果包括:拉力试验的主要失效机理是铅断裂。拉力测试的结果表明,这些值主要受引线老化效应的影响。金相检查结果表明,结合界面处的时效机理不同。由于带的高粗糙度,锡在铜和金之间的界面中的积累加快了柯肯德尔效应和孔的形成。可以通过减少粗糙度的胶带来避免形成共晶焊接孔,这可以最大程度地减少键合过程中锡的堆积。与其他芯片接触方法相比,TAB技术显示出很高的可靠性,即使在200摄氏度下进行了非常严格的热老化后,其退化也非常低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号