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Resultant Seebeck coefficient formulated by combining the Thomson effect with the intrinsic Seebeck coefficient of a thermoelectric element

机译:通过将汤姆森效应与热电元件的本征塞贝克系数相结合而得出的结果塞贝克系数

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The resultant Seebeck coefficient α_R(T_z) of a thermoelectric (TE) element was derived analytically from the temperature dependence of the intrinsic Seebeck coefficient α_1(T_z) by taking into account the Thomson effect, where T_z is a temperature at z along a TE element. The analysis was performed by expanding α_1(T_z) in a power series in (T_z - T), where T is a mean temperature. As a result, when α_1(T_z) has a convex curve exhibiting a local maximum at T_z - T, α_R(T_z) is increased at the interfaces of a TE element, while when it has a concave curve giving a local minimum at T_z = T, α_R(T_z) deteriorates there. If the p-type (Bi_(0.4)Sb_(0.6))_2Te_3 with a local maximum of α_1(T_z) at T= 390 K is employed for a TE element, α_R(T_z)/α_1(T) at both interfaces is increased up to 1.53 under the condition of T=390K and AT=200K. A similar enhancement in α_R(T_z)/α_1(T) appeared even in the n-type (Zr-Hf)NiSn half-Heusler. When α_1(T_z) varies nonlinearly with changes in T_z, therefore, the TE figure of merit Z_R(T_z)T_z is found to be affected dramatically at the interfaces. The average resultants Z_(AR)(T) estimated for the p-type Bi-Te and n-type half-Heusler compound reach great values of 1.46 and 1.26 times as large as their intrinsic Z(T), respectively. The experimental method to confirm such a phenomenon is also proposed here. The performance of a TE element is thus expected to be enhanced significantly not only by improving the intrinsic Z(T_z)T_z but also by optimizing the T_z-dependence of α_1(T_z).
机译:考虑到汤姆森效应,根据固有塞贝克系数α_1(T_z)的温度依赖性,通过考虑到汤姆森效应,可以解析得出热电(TE)元素的合成塞贝克系数α_R(T_z),其中T_z是沿TE元素在z处的温度。 。通过以(T_z-T)的幂级数扩展α_1(T_z)进行分析,其中T为平均温度。结果,当α_1(T_z)的凸曲线在T_z-T处表现出局部最大值时,α_R(T_z)在TE元素的界面处增加,而当α_1(T_z)的凹曲线给出T_z = T处的局部最小值时, T,α_R(T_z)在那里恶化。如果TE元素采用在T = 390 K处具有局部最大值α_1(T_z)的p型(Bi_(0.4)Sb_(0.6))_ 2Te_3作为TE元素,则两个接口处的α_R(T_z)/α_1(T)为在T = 390K和AT = 200K的情况下增加到1.53。即使在n型(Zr-Hf)NiSn半Heusler中,α_R(T_z)/α_1(T)也会出现类似的增强。因此,当α_1(T_z)随着T_z的变化而非线性地变化时,发现TE的品质因数Z_R(T_z)T_z在界面处受到显着影响。对p型Bi-Te和n型半霍斯勒化合物估计的平均结果Z_(AR)(T)分别达到其固有Z(T)的1.46和1.26倍。这里还提出了确认这种现象的实验方法。因此,期望不仅通过改善本征Z(T_z)T_z而且通过优化α_1(T_z)的T_z依赖性来显着提高TE元件的性能。

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