Research on Microelectronic Engineering Detailed by Scientists at IBM

摘要

2011 AUG 17 - (VerticalNews.com) -- According to the authors of a study fromrnRuschlikon, Switzerland, "Experiments to increase the specific capacitance of MOS capacitorsrnconsisting of HfO2 on a passivating interfacial layer (IL) of amorphous Si (a-Si) on GaAs arerndescribed."