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High-Performance Predictable NVM-Based Instruction Memory for Real-Time Embedded Systems

机译:基于高性能可预测的NVM基于实时嵌入式系统的指令存储器

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Worst case execution time and energy consumption are two of the most important design constraints of real-time embedded systems and memory subsystem has a major impact on both of them. Therefore, many recent studies have tried to improve the memory subsystem of embedded systems by using emerging non-volatile memories instead of conventional memories such as SRAM and DRAM. Indeed, the low leakage power dissipation and improved density of emerging non-volatile memories make them prime candidates for replacing the conventional memories. However, accessing these memories imposes performance and energy overhead and using them as the instruction memory could increase the worst case execution time, which would have a negative impact on the system. Furthermore, most previous studies that have tried to address such problems have focused on the data memory and therefore their solutions are not suitable for the instruction memory. In this paper, a new instruction memory architecture for non-volatile memories is proposed which reduces the effective memory access latency by employing memory access interleaving technique. Unlike common instruction access latency improvement techniques such as prefetching which usually increase the worst case execution time of the system, the proposed architecture is predictable and does not increase the worst case execution time of the system. Furthermore, it improves both average case execution time and energy consumption of the system and requires no changes to the application code. The proposed architecture has been evaluated using different applications from MiBench and Malardalen benchmark suites and the results show that compared to previous studies, the proposed architecture can improve the memory energy consumption, the average case execution time, and the worst case execution time of the system by 73, 61, and 27 percent respectively.
机译:最坏的情况执行时间和能量消耗是实时嵌入式系统最重要的两个设计限制,内存子系统对它们的两个都有重大影响。因此,许多最近的研究通过使用新出现的非易失性存储器而不是SRAM和DRAM等传统存储器来改善嵌入式系统的存储器子系统。实际上,低漏功率耗散和改善的新出现的非易失性存储器的密度使其成为更换传统存储器的主要候选者。但是,访问这些存储器施加性能和能量开销并使用它们,因为指令存储器可能会增加最坏的情况执行时间,这会对系统产生负面影响。此外,最先前的研究已经尝试解决此类问题的专注于数据存储器,因此它们的解决方案不适合指令存储器。在本文中,提出了一种用于非易失性存储器的新指令存储器架构,其通过采用存储器访问交织技术来降低有效的存储器访问等待时间。与通常增加系统的最坏情况执行时间的预取的常见指令访问延迟改进技术不同,所提出的架构是可预测的,并且不会增加系统的最坏情况执行时间。此外,它改善了系统的平均案例执行时间和能量消耗,并且不需要对应用程序代码的更改。拟议的架构已经使用来自Mibench和Malardalen基准套件的不同应用程序进行了评估,结果表明,与以前的研究相比,所提出的架构可以提高内存能耗,平均案例执行时间和系统的最坏情况执行时间分别为73,61和27%。

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