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机译:预测常压GaN Hemts在常压下的开启过冲的分析模型
Virginia Tech Ctr Power Elect Syst Blacksburg VA 24061 USA;
NASA Jet Prop Lab Power Subsyst Engn Dept Pasadena CA 91109 USA;
Naval Surface Warfare Ctr Philadelphia PA USA;
Gen Motors Plymouth MI USA;
Univ Pittsburgh Elect & Comp Engn Dept Pittsburgh PA 15261 USA;
Univ Pittsburgh Elect & Comp Engn Dept Pittsburgh PA 15261 USA;
Univ Pittsburgh Elect & Comp Engn Dept Pittsburgh PA 15261 USA;
Univ Toledo Dept Elect Engn & Comp Sci Toledo OH 43606 USA;
Logic gates; Gallium nitride; Capacitance; Integrated circuit modeling; Power electronics; Analytical models; Switching circuits; Gate-driving circuits; semiconductor device modeling; switching transients; wide bandgap semiconductors;
机译:常关P-GaN门Algan / GaN HEMT作为片上电容的建模与分析
机译:Algan / GaN朝向常压血管的P型氧化物栅极层的设计原理:Li-Doped Nio作为模型
机译:GaN HEMT导通过电压建模和抑制的归一化定量方法
机译:氮化镓HEMT共源共栅配置的改进分析模型
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:常压Algan / GaN MOS-HEMTS的建模与仿真