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Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices

机译:使用忆阻器件的节能片上非易失性存储器的挑战和电路技术

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Memristive devices have shown considerable promise for on-chip nonvolatile memory and computing circuits in energy-efficient systems. However, this technology is limited with regard to speed, power, VDDmin, and yield due to process variation in transistors and memrisitive devices as well as the issue of read disturbance. This paper examines trends in the design of device and circuits for on-chip nonvolatile memory using memristive devices as well as the challenges faced by researchers in its further development. Several silicon-verified examples of circuitry are reviewed in this paper, including those aimed at high-speed, area-efficient, and low-voltage applications.
机译:忆阻器件已在节能系统中的片上非易失性存储器和计算电路中显示出了巨大的前景。但是,由于晶体管和忆阻器件的工艺变化以及读取干扰问题,该技术在速度,功率,VDDmin和成品率方面受到限制。本文研究了使用忆阻器件的片上非易失性存储器的器件和电路设计的趋势,以及研究人员在其进一步发展中面临的挑战。本文回顾了几个经过硅验证的电路示例,包括那些针对高速,面积高效和低压应用的电路。

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