Front-End electronics for Silicon Photomultiplier detectors implemented in CMOS VLSI integrated circuit

摘要

Silicon Photomultiplier (SiPM) detectors are of great interest mostly because they can operate with light levels of few photons at room temperature and have fast response with typical rise time of 2-5ns. The paper presents an integrated circuit of front-end electronics designed in CMOS technology, dedicated for Silicon Photomultiplier (SiPM) detectors. The circuits was produced in the AMS 0,35μm technology and preliminary test results show its high performance.