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Specs On 3d Chip Stacks Released

机译:发布3D芯片规格

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The Intimate Memory Interconnect Standard (IMIS) being promoted by the 3D-IC Alliance recently released its official specification for 3D stacking memory chips. Founding members of the Alliance, Tezzaron Semiconductor Corp. and Ziptronix Inc. are already fabricating memory chips using the IMIS port, the first versions of which will be available by the end of 2008. Owing to the low capacitance of the "intimate" connection achieved by stacking a memory die atop a processor die, power consumption is about 24μW/pin compared to 30mW to 40mW per pin for DDR. That low-power in IMIS's 1,000-pin parallel connection between processor and memory limits power consumption to less that 3W, compared to over 30W for conventional interconnects.
机译:由3D-IC联盟推动的紧密内存互连标准(IMIS)最近发布了3D堆栈存储芯片的正式规范。联盟的创始成员,Tezzaron Semiconductor Corp.和Ziptronix Inc.已经在使用IMIS端口制造存储芯片,其第一个版本将于2008年底推出。由于“亲密”连接的电容低通过将存储器裸片堆叠在处理器裸片上,功耗约为24μW/引脚,而DDR则为每引脚30mW至40mW。 IMIS处理器与内存之间的1,000针并行连接中的低功耗将功耗限制在3W以内,而传统互连的功耗则超过30W。

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