GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source

摘要

GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source, trimethylamine alane, have been successfully fabricated. Broad-area lasers made from the material have a threshold current density of 200 A cm/sup -2/. A V-grooved laser with a monolithically integrated intracavity loss modulator was used to vary the threshold current from I/sub th/=15 mA at an absorber voltage of V/sub S/=2.5 V to I/sub th/=210 mA for V/sub S/=-2.5 V.