Improving the characteristics of InAlAs/InGaAs heterojunction bipolar transistors by employing thin base and collector layers

摘要

InAlAs/InGaAs heterojunction bipolar transistors with thin base and collector layers are fabricated. The maximum value of current gain cutoff frequency is as high as 96 GHz. It is shown that thinning of the base and collector is very effective not only for reducing the base and collector transit times but also for suppressing the space charge effect in the collector.