Ka-band monolithic amplifier using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FET technology

摘要

Monolithic, two-stage amplifiers using 0.5*80 mu m/sup 2/ gate GaAs/AlGaAs heterojunction FETs have been developed for Ka-band operation. These monolithic two-stage amplifiers were fabricated using ion implantation for the active layer and optical lithography for the 0.5 mu m gate length. MMIC two-stage amplifiers achieved average gains of 12.6+or-1.4 dB at 30 GHz and 8.8+or-2.0 dB at 40 GHz, respectively, for all 39 sites across a three inch diameter wafer. These are the first reported results for MMIC two-stage amplifiers using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FETs achieving over 10 dB gain at Ka band.