8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mu m recessed-gate AlGaAs/GaAs HEMTs

Hurm V.; Rosenzweig J.

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8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mu m recessed-gate AlGaAs/GaAs HEMTs

机译：使用MSM光电二极管和0.5μm嵌入式栅AlGaAs / GaAs HEMT的8.2 GHz带宽单片集成光电接收器

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摘要

An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 mu m recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated.

机译：使用增强/耗尽型0.5微米凹栅AlGaAs / GaAs HEMT工艺制造了由MSM光电二极管，跨阻放大器和50Ω输出缓冲器组成的8.2 GHz带宽单片光电接收器。数据速率高达10 Gbit / s的成功运行已得到证明。

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来源
《Electronics Letters》 |1991年第9期|P.734-735|共2页
作者
Hurm V.; Rosenzweig J.;
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作者单位

Fraunhofer-Inst. fuer Angewandte Festkoerphys., Freiburg, Germany;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; photodiodes; receivers; 0.5 micron; 10 Gbit/s; 50 Omega output buffer; 50 ohm; 8.2 GHz; AlGaAs-GaAs; MSM photodiode; OEIC; data rates; enhancement/depletion HEMTs; monolithic optoelectronic receiver; operation; optical receivers; recessed gate HEMTs; semiconductors; transimpedance amplifier;

机译：III-V半导体;铝化合物;场效应集成电路;砷化镓;集成光电;金属半导体-金属结构;光电二极管;接收器;0.5微米;10 Gbit / s;50Ω输出缓冲器;50 ohm;8.2 GHz;AlGaAs -GaAs;MSM光电二极管;OEIC;数据速率;增强/耗尽HEMT;单片光电接收器;操作;光学接收器;嵌入式栅极HEMT;半导体;互阻放大器;

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专利

1. 14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver [J] . Hurm V., Ludwig M. Electronics Letters . 1993,第1期

机译：14 GHz带宽MSM光电二极管AlGaAs / GaAs HEMT单片集成光电接收器
2. 1.3 mu m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs [J] . Hurm V., Benz W. Electronics Letters . 1995,第1期

机译：使用InGaAs MSM光电二极管和在GaAs上生长的AlGaAs / GaAs HEMT的1.3μm单片集成光电接收器
3. 10 Gb/s monolithic integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver [J] . Hurm V., Rosenzweig J. IEEE Transactions on Electron Devices . 1991,第12期

机译：10 Gb / s单片集成MSM光电二极管AlGaAs / GaAs-HEMT光电接收器
4. 1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs [C] . Hurm, V., Benz, . 1994

机译：使用InGaAs MSM光电二极管和在GaAs上生长的AlGaAs / GaAs HEMT的1.3 / splμ/ m单片集成光电接收器
5. Monolithic high-speed optoelectronic integrated receivers for greater than 10 gigabits per second optical communications. [D] . Mu, Jinghui. 2000

机译：单片高速光电集成接收器，可实现每秒10吉比特以上的光通信。
6. 14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver. [O] . Hurm, V., Ludwig, M., Rosenzweig, J., 1993

机译：14 GHz带宽msm光电二极管alGaas / Gaas HEmT单片集成光电接收器。
7. AlGaAs/GaAs Radiation-Hardened Photodiode for Optoelectronic Component Applications. [R] . Rose, B. H., Keefe, R. G. 1989

机译：用于光电元件应用的alGaas / Gaas辐射硬化光电二极管。

8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 mu m recessed-gate AlGaAs/GaAs HEMTs

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