机译:采用双凹槽栅极工艺的高击穿电压InAlAs / InGaAs / InP HEMT
Naval Res. Lab., Washington, DC, USA;
III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1.4 micron; 16 GHz; 16 V; 40 GHz; 560 mS; 6 mS; DC performance; HEMTs; InAlAs-InGaAs-InP; RF performance; double-recess gate process; gate length; gate-drain breakdown voltage; high breakdown voltages; intrinsic transconductance; microwave device; output conductance; source-drain breakdown voltage;
机译:不同结构的InAlAs / InGaAs / InP HEMT的击穿电压研究
机译:基于InP的InAlAs / InGaAs HEMT中的体接触及其对击穿电压和扭折抑制的影响
机译:两步栅极凹陷过程结合了选择性湿法蚀刻和数字湿法蚀刻,用于Inalas / InGaAs基于INP的垫圈
机译:InP-InAlAs和InGaP-InAlAs混合垫片可减少InAlAs / InGaAs / InP HEMT中的栅极泄漏电流
机译:了解高击穿电压的氮化铝镓/氮化镓HEMT的材料和工艺限制。
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:错误到:“InP衬底上的Inalas / InGaAs / Inalas HEMT异质结构的结构和电性能与inaS阱插入量”