15 GHz f/sub max/ microwave silicon p-n- rho transistors with single-crystal emitters fabricated with simple four mask process

摘要

Vertical p-n- rho transistors have been fabricated using a four mask, low cost quasi-selfaligned process with submicrometre feature sizes. The resulting monocrystalline emitter devices achieve f/sub t/ greater than 9 GHz and f/sub max/ greater than 15 GHz with BV/sub ceo/ greater than 13 V. These discrete p-n- rho 's were used successfully as active loads for a monolithic n- rho -n opamp to achieve a gain-bandwidth product of 4.4 GHz.