20W CW monolithic AlGaAs (810 nm) laser diode arrays

Sakamoto M.; Endriz J.G.

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20W CW monolithic AlGaAs (810 nm) laser diode arrays

机译：20W连续波单片AlGaAs（810 nm）激光二极管阵列

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摘要

Good continuous-wave (CW) lifetimes have been demonstrated for 1 cm wide monolithic AlGaAs laser diode arrays (810 nm) with a 4800 mu m total aperture width at a power level of 20 W. This represents the highest CW power level at which long lifetimes have been obtained.

机译：在功率水平为20 W的情况下，总孔径宽度为4800μm的1 cm宽单片式AlGaAs激光二极管阵列（810 nm）表现出良好的连续波（CW）寿命。已获得使用寿命。

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来源
《Electronics Letters》 |1992年第2期|P.178-180|共3页
作者
Sakamoto M.; Endriz J.G.;
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作者单位

Spectra Diodes Labs., San Jose, CA, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
III-V semiconductors; aluminium compounds; gallium arsenide; optical pumping; semiconductor laser arrays; 20 W; 4800 micron; 810 nm; AlGaAs laser diode arrays; CW lifetimes; power level; total aperture width;

机译：III-V半导体;铝化合物;砷化镓;光泵浦;半导体激光阵列;20 W;4800微米;810 nm;AlGaAs激光二极管阵列;CW寿命;功率水平;总孔径宽度;

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专利

1. 120 W CW output power from monolithic AlGaAs (800 nm) laser diode array mounted on diamond heatsink [J] . Sakamoto M., Endriz J.G. Electronics Letters . 1992,第2期

机译：来自安装在金刚石散热器上的单片AlGaAs（800 nm）激光二极管阵列的120 W CW输出功率
2. CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors [J] . Donnelly J.P., Goodhue W.D. IEEE Photonics Technology Letters . 1993,第10期

机译：具有干刻垂直面和抛物线偏转镜的表面发射AlGaAs二极管激光器单片阵列的CW操作
3. CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers [J] . Donnelly J.P., Goodhue W.D. IEEE Photonics Technology Letters . 1993,第7期

机译：表面发射折叠腔InGaAs / AlGaAs二极管激光器的单片阵列的CW操作
4. High-power short-wavelength AlGaAs-based broad area lasers-record cw power of 8.5 W cw at 810 nm and high power reliability demonstration at 840 nm [C] . OBrien, S., Zhao, . 1996

机译：高功率短波基于AlGaAs的广域激光器在810 nm处记录了8.5 W cw的cw功率，并在840 nm处记录了高功率可靠性
5. Monolithic etched-facet triangular waveguide diode ring laser arrays for hybrid optical packages using passive alignment. [D] . Wilson, Karen Irene. 1998

机译：用于无源对准的混合光学封装的整体式刻蚀面三角形波导二极管环形激光器阵列。
6. Evaluation of the Effects of 660-nm and 810-nm Low-Level Diode Lasers on the Treatment of Dentin Hypersensitivity [O] . Narges Naghsh, Mahdi Kachuie, Marzie Kachuie, 2020

机译：评估660 nm和810 nm低水平半导体激光器对牙本质过敏的治疗效果
7. Is transcanalicular laser dacryocystorhinostomy using low energy 810 nm diode laser better than 980 nm diode laser? [O] . Ruchi Goel, Smriti Nagpal, Sonam Garg, 2015

机译：使用低能量810 nm二极管激光的经颅激光泪囊鼻腔吻合术是否优于980 nm二极管激光？
8. Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies [R] . Goodhue, W. D., Donnelly, J. P., Wang, C. A., 1991

机译：单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列，具有超过50％的差分量子效率

20W CW monolithic AlGaAs (810 nm) laser diode arrays

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