Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications

摘要

The authors report the development of a triple-channel HEMT with two undoped In/sub 0.53/Ga/sub 0.47/As layers and a spike-doped In/sub 0.52/Al/sub 0.48/As layer on InP, designed to have a strongly nonlinear transconductance. The effective electron velocity and the electron density in the InGaAs layers are higher than in the thick InAlAs layer resulting in a highly nonlinear transconductance device with the potential for improved performance in nonlinear microwave circuit applications, as compared with conventional MESFETs and HEMTs.