Static frequency dividers for high operating speed (25 GHz, 170 mW) and low power consumption (16 GHz, 8 mW) in selective epitaxial Si bipolar technology

摘要

Static frequency dividers have been fabricated in a selective epitaxial bipolar technology using 0.8 mu m lithography. The measured maximum frequency of 25 GHz is the highest value reported for static silicon dividers. Moreover, a 16 GHz low-power version is presented which consumes only 8 mW in the first stage.