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机译:通过MOCVD生长的具有改善的特性的高C掺杂基InGaP / GaAs HBT
Kings Coll., London Univ., UK;
III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 0.1 muA; InGaP emitter; InGaP-GaAs:C; MOCVD; current gain; emitter-base leakage current; high C-doped bases; n-p-n HBT structures; near ideal I-V characteristics;
机译:LP-MOCVD生长的高直流电流增益InGaP / GaAs HBT
机译:InP发射极和GaAs_(1-y)Sb_y之间应变的GaAs隔离层对MOCVD生长的InP / GaAs_(1-y)Sb_y / InP DHBTs的结构性能和电学特性的影响
机译:在非常高的电流密度条件下工作的重掺杂C的InGaP / GaAs HBT的可靠性研究
机译:通过MOCVD生长的InP / InGaAs D-HBT中的成分渐变C掺杂的In / sub 1-x / Ga / sub x / As基,具有低基片电阻和高电流增益
机译:MOCVD生长的GaAs / AlGaAs核壳纳米线的光致发光和共振拉曼光谱。
机译:电子束法表征MOCVD InGaP / GaAs结中界面处多余层的化学性质
机译:通过mOCVD生长的低导通电压InGap / Gaassb / Gaas双HBT
机译:OmVpE生长的N-p-n InGap / InGaasN DHBT的DC特性