...
机译:0.98μm高功率InGaAs-GaAs-InGaP分布式反馈掩埋异质结构应变量子阱激光器
Oki Electric Industry Co. Ltd., Tokyo, Japan;
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; vapour phase epitaxial growth; 0.98 micron; 150 mA; 2.9 mA; 58 mW; Bragg wavelength; CW monomode output; DFB lasers; InGaAs-GaAs-InGaP; buried heterostructure; distributed feedback; high power operation; injection current; laser threshold; maximum monomode output power; strained quantum well lasers; three step MOVPE process;
机译:InGaAs-GaAs-InGaP分布反馈掩埋异质结构应变量子阱激光器,用于0.98微米大功率工作
机译:三步MOVPE生长的高功率InGaAs-GaAs-InGaP分布反馈掩埋异质结构应变量子阱激光器
机译:通过两步MOVPE生长的高功率InGaAs-GaAs-InGaP掩埋异质结构应变量子阱激光器
机译:0.98 / spl mu / m高功率InGaAs-GaAs应变层掩埋异质结构激光器
机译:应变量子阱隧穿注入和分离禁区异质结构激光器的表征。
机译:使用非对称In0.15Ga0.85N / In0.02Ga0.98N多量子阱提高InGaN激光二极管的输出功率
机译:1.5μmInGaasp多量子阱分布反馈掩埋异质结构激光器的非选择性再生长
机译:具有GaInp包层和质量传输埋层异质结构的低阈值InGaas应变层量子阱激光器(λ= 0.98微米)