Zero-bias modulation of tensile-strained InGaAs/InGaAsP quantum well lasers with wide phase margins

摘要

1 Gbit/s, zero-bias modulation with wide phase margins was achieved over a 20-100 degrees C temperature range with a tensile-strained InGaAs/InGaAsP quantum well laser emitting at a wavelength of 1.5 mu m.