Noise and small-signal performance of three different monolithic InP-based 10 Gbit/s photoreceiver OEICs

摘要

Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs-InP pin photodiode and InAlAs-InGaAs-InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/ square root (Hz) within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC.