Yellow emission (573.5 nm) Ga/sub 0.65/In/sub 0.35/P lasers grown on GaAs/sub 0.6/P/sub 0.4/ substrates by gas source molecular beam epitaxy

摘要

The first current injection lasing action in AlGaInP/Ga/sub 0.65/In/sub 0.35/P heterostructures grown on commercially available GaAs/sub 0.6/P/sub 0.4/ substrates is reported. At 77 K, laser diodes exhibited threshold current densities of 900 A/cm/sup 2/ with yellow stimulated emission near 5735 AA. This is the shortest current injection lasing wavelength ever achieved in a III-V compound semiconductor.