Mid-infra-red InGaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates

摘要

InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors' diodes exhibit efficient room-temperature emission at 1.9 mu m, necessary for optical sensing of water vapour.